| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.contributor.author | Piljuk, E. A. | - |
| dc.contributor.author | Goncharov, I. Yu. | - |
| dc.contributor.author | Rodriges, V. G. | - |
| dc.contributor.author | Taran, S. V. | - |
| dc.date.accessioned | 2020-01-29T11:10:54Z | - |
| dc.date.available | 2020-01-29T11:10:54Z | - |
| dc.date.issued | 2014 | - |
| dc.identifier.citation | RF-Magnetron sputtering of silicon carbide and silicon nitride films for solar cells / V.S. Zakhvalinskii [и др.] // Journal of Nano- and Electronic Physics. - 2014. - Vol.6, №3.-Art. 03062. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/28225 | - |
| dc.description.abstract | RF-magnetron nonreactive sputtering method from solid-phase target in argon atmosphere was used for obtaining thin silicon carbide and silicon nitride films, that are used for constructing solar cells based on substrates of single crystal silicon of p-type | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | thin films | ru |
| dc.subject | RF magnetron sputtering | ru |
| dc.subject | solar cells | ru |
| dc.subject | silicon carbide | ru |
| dc.subject | silicon nitride | ru |
| dc.subject | atomic force microscopy | ru |
| dc.title | RF-Magnetron sputtering of silicon carbide and silicon nitride films for solar cells | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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