| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Galeeva, A. V. | - |
| dc.contributor.author | Krylov, I. V. | - |
| dc.contributor.author | Drozdov, K. A. | - |
| dc.contributor.author | Knjazev, A. F. | - |
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.date.accessioned | 2020-01-29T12:17:16Z | - |
| dc.date.available | 2020-01-29T12:17:16Z | - |
| dc.date.issued | 2017 | - |
| dc.identifier.citation | Electron energy relaxation in (Cd₁-xZnx)₃As₂ Dirac semimetals studied by terahertz laser pulses / A.V. Galeeva [et al.] // Infrared, Millimeter, and Terahertz Waves (IRMMW-THz-2017), Cancun, Mexico 27 Aug. - 1 Sept., 2017 : 42nd intern. conf. / Institute of Electrical and Electronics Engineers. - New York, 2017. - Art. 8067145. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/28234 | - |
| dc.description.abstract | We performed a study of a range of (Cd₁-xZnx)₃As₂ mixed crystals undergoing a transition from the Dirac semimetal phase to trivial semiconductor at variation of the composition x. We show that for the Dirac semimetal phase, the photoelectromagnetic effect amplitude is defined by the number of incident radiation quanta, whereas for the trivial semiconductor phase, it depends on the power in a laser pulse irrespective of its wavelength | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | Dirac semimetals | ru |
| dc.subject | free electron lasers | ru |
| dc.subject | topological insulators | ru |
| dc.subject | magnetic fields | ru |
| dc.subject | terahertz radiation | ru |
| dc.subject | power lasers | ru |
| dc.title | Electron energy relaxation in (Cd₁-xZnx)₃As₂ Dirac semimetals studied by terahertz laser pulses | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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