| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.contributor.author | Piliuk, E. A. | - |
| dc.contributor.author | Goncharov, I. Yu. | - |
| dc.contributor.author | Simashkevich, A. V. | - |
| dc.contributor.author | Sherban, D. A. | - |
| dc.date.accessioned | 2020-01-29T12:21:22Z | - |
| dc.date.available | 2020-01-29T12:21:22Z | - |
| dc.date.issued | 2016 | - |
| dc.identifier.citation | Silicon solar cells based on pSi/nSi3N4 nanolayers / V.S. Zakhvalinskii [и др.] // Results in Physics. - 2016. - Vol.6.-P. 39-40. | ru |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/28235 | - |
| dc.description.abstract | Thin films of Si3N4 were prepared by non-reactive magnetron sputtering in an Ar atmosphere. A previously synthesized Si3N4 was used as a solid-state target. Deposition was carried out on a cold substrate of p-Si (100) with a resistivity of 2 Ohm cm. The Raman spectrum of the deposited Si3N4 layers has been investigated | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | thin films | ru |
| dc.subject | Si3N4 thin films | ru |
| dc.subject | silicon solar cells | ru |
| dc.subject | nanolayers | ru |
| dc.subject | photovoltaic cells | ru |
| dc.subject | heterostructures | ru |
| dc.subject | magnetron sputtering | ru |
| dc.title | Silicon solar cells based on pSi/nSi3N4 nanolayers | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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