| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Zakhvalinskii, V. S. | - |
| dc.contributor.author | Pilyuk, E. A. | - |
| dc.contributor.author | Nikulicheva, T. B. | - |
| dc.contributor.author | Ivanchikhin, S. V. | - |
| dc.contributor.author | Yaprintsev, M. N. | - |
| dc.contributor.author | Goncharov, I. Yu. | - |
| dc.contributor.author | Kolesnikov, D. A. | - |
| dc.contributor.author | Morocho, A. A. | - |
| dc.date.accessioned | 2021-06-09T08:06:44Z | - |
| dc.date.available | 2021-06-09T08:06:44Z | - |
| dc.date.issued | 2020 | - |
| dc.identifier.citation | Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering / V.S. Zakhvalinskii [et al.] // Journal of Nano- and Electronic Physics. - 2020. - Vol.12, №3.-Art. 03029. - Doi: 10.21272/jnep.12(3).03029. - URL: https://jnep.sumdu.edu.ua/download/numbers/2020/3/articles/jnep_12_3_03029.pdf | ru |
| dc.identifier.other | Doi: 10.21272/jnep.12(3).03029 | - |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/41611 | - |
| dc.description.abstract | Cadmium arsenide films on oxidized silicon substrates were obtained by RF magnetron sputtering. The structure and morphology of the surface were studied by atomic force microscopy (AFM) and Raman spectroscopy | ru |
| dc.language.iso | en | ru |
| dc.subject | physics | ru |
| dc.subject | solid state physics | ru |
| dc.subject | cadmium arsenide | ru |
| dc.subject | Dirac semimetals | ru |
| dc.subject | thin films | ru |
| dc.subject | hopping conductivity | ru |
| dc.title | Hopping Conductivity Mechanism in Cd₃As₂ Films Prepared by Magnetron Sputtering | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)
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