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Please use this identifier to cite or link to this item: http://dspace.bsu.edu.ru/handle/123456789/4450
Title: The Hall effect in Ni-doped p-CdSb in a strong magnetic field
Authors: Laiho, R.
Lashkul, A. V.
Zakhvalinskii, V. S.
Keywords: physics
solid state physics
crystallography
Hall effect
magnetic field
single crystals
Issue Date: 2008
Citation: The Hall effect in Ni-doped p-CdSb in a strong magnetic field / R. Laiho, A.V. Lashkul, ... V.S Zakhvalinskii et al. // Semiconductor Science and Technology. - 2008. - Vol.23, N12.-Art. 125001. - doi:10.1088/0268-1242/23/12/125001.
Abstract: The Hall effect in single crystals of the group II–V semiconductor p-CdSb doped with 2 at% of Ni is investigated between T = 1.5 and 300 K in pulsed magnetic fields up to B = 25 T. The Hall resistivity, ρH, exhibits a nonlinear dependence on B, which is strongly pronounced below ~10 K but is still observed even up to 300 K
URI: http://dspace.bsu.edu.ru/handle/123456789/4450
Appears in Collections:Статьи из периодических изданий и сборников (на иностранных языках) = Articles from periodicals and collections (in foreign languages)

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