| Поле DC | Значение | Язык |
|---|
| dc.contributor.author | Mohebbifar, M. R. | - |
| dc.contributor.author | Gainutdinov, R. Kh. | - |
| dc.contributor.author | Khamadeev, M. A. | - |
| dc.date.accessioned | 2023-11-24T12:29:42Z | - |
| dc.date.available | 2023-11-24T12:29:42Z | - |
| dc.date.issued | 2015 | - |
| dc.identifier.uri | http://dspace.bsu.edu.ru/handle/123456789/58065 | - |
| dc.description.abstract | In order to the generation of single photon and the production of dressed states between photons and electrons in nanophotonic structures, achieving strong coupling regime is necessary. One of the best ways achieving to strong coupling, is quantum dots embedded in nanocavitv of photonic crystals | ru |
| dc.language.iso | en | ru |
| dc.publisher | Mohebbifar, M.R. Study on the achieving to strong coupling regime for InAs/GaAs quantum dot embedded in the nanocavity / M.R. Mohebbifar, Gainutdinov R.Kh., M.A. Khamadeev ; Kazan Federal University // Научные ведомости БелГУ. Сер. Математика. Физика. - 2015. - №11(208), вып.39.-С. 205-210. | ru |
| dc.subject | physics | ru |
| dc.subject | physical optics | ru |
| dc.subject | InAs/GaAs quantum dot | ru |
| dc.subject | strong coupling regime | ru |
| dc.subject | nanocavitv | ru |
| dc.subject | dressed state | ru |
| dc.subject | cavity decay rate | ru |
| dc.title | Study on the achieving to strong coupling regime for InAs/GaAs quantum dot embedded in the nanocavity | ru |
| dc.type | Article | ru |
| Располагается в коллекциях: | № 11 (208), вып. 39
|
